Photodiodes - Phototransistors
Photodiodes - Phototransistors
| Product | Description | Half Angle (deg) | Package | Peak sens. wavelenght (nm) | Sensitive Area (mm) | Short circuit current (µA) | Typology | Responsivity (mA/W) @λ(nm) | Sensitive Area (µmɸ) | Sensitive Wavelenght (nm) |
|---|---|---|---|---|---|---|---|---|---|---|
|
Discontinued
|
KPD101M51 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
76
|
Package
ϕ5 plastic mold
|
Peak sens. wavelenght (nm)
850
|
Sensitive Area (mm)
0.81 x 0.81
|
Short circuit current (µA)
19
|
Typology
Silicon Photodiodes
|
|||
|
Discontinued
|
KPD104M51 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
40
|
Package
ϕ5 plastic mold
|
Peak sens. wavelenght (nm)
850
|
Sensitive Area (mm)
0.81 x 0.81
|
Short circuit current (µA)
55
|
Typology
Silicon Photodiodes
|
|||
|
Discontinued
|
KPD151M53 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
130
|
Package
ϕ5 plastic mold
|
Peak sens. wavelenght (nm)
850
|
Sensitive Area (mm)
1.25 x 1.25
|
Short circuit current (µA)
16
|
Typology
Silicon Photodiodes
|
|||
|
Discontinued
|
KPDE0301M51 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi |
Package
ϕ5 plastic mold
|
Typology
InGaAs NIR Photodiodes
|
Responsivity (mA/W) @λ(nm)
0.9 @ 1550
|
Sensitive Area (µmɸ)
300
|
Sensitive Wavelenght (nm)
900 - 1700
|
||||
|
Discontinued
|
KPDE300 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi |
Package
TO-5, hermetic seal
|
Typology
InGaAs NIR Photodiodes
|
Responsivity (mA/W) @λ(nm)
1.0 @ 1550
|
Sensitive Area (µmɸ)
3000
|
Sensitive Wavelenght (nm)
900 - 1700
|