Photodiodes - Phototransistors
Photodiodes - Phototransistors
| Product | Description | Package | Responsivity (mA/W) @λ(nm) | Sensitive Area (µmɸ) | Sensitive Wavelenght (nm) | Typology | Peak sens. wavelenght (nm) | Half Angle (deg) | Sensitive Area (mm) | Short circuit current (µA) | Amplification factor |
|---|---|---|---|---|---|---|---|---|---|---|---|
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KPDE150 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi |
Package
TO-18, hermetic seal
|
Responsivity (mA/W) @λ(nm)
1.0 @ 1550
|
Sensitive Area (µmɸ)
1500
|
Sensitive Wavelenght (nm)
900 - 1700
|
Typology
InGaAs NIR Photodiodes
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KPID020D-H8 Photodevices for Sensors - Detectors, High Speed Silicon Photodiodes, Kyosemi |
Package
TO-18, hermetic seal
|
Responsivity (mA/W) @λ(nm)
350 @ 850
|
Sensitive Area (µmɸ)
200
|
Typology
High Speed Silicon Photodiodes
|
Peak sens. wavelenght (nm)
700
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KPD1201H Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Package
TO-18, hermetic seal
|
Typology
Silicon Photodiodes
|
Peak sens. wavelenght (nm)
880
|
Half Angle (deg)
23
|
Sensitive Area (mm)
0.92 x 0.92
|
Short circuit current (µA)
60
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KPD1203H Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Package
TO-18, hermetic seal
|
Typology
Silicon Photodiodes
|
Peak sens. wavelenght (nm)
880
|
Half Angle (deg)
100
|
Sensitive Area (mm)
0.92 x 0.92
|
Short circuit current (µA)
8
|
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KPD1801H Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Package
TO-18, hermetic seal
|
Typology
Silicon Photodiodes
|
Peak sens. wavelenght (nm)
840
|
Half Angle (deg)
34
|
Sensitive Area (mm)
1.30 x 1.60
|
Short circuit current (µA)
70
|
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KPD1803H Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Package
TO-18, hermetic seal
|
Typology
Silicon Photodiodes
|
Peak sens. wavelenght (nm)
840
|
Half Angle (deg)
95
|
Sensitive Area (mm)
1.30 x 1.60
|
Short circuit current (µA)
17
|
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KPDA020P-H8 Kyosemi Photodevices for sensors - Detectors, Silicon Avalanche Photodiodes |
Package
TO-18, hermetic seal
|
Responsivity (mA/W) @λ(nm)
450 @ 850
|
Sensitive Area (µmɸ)
200
|
Typology
Silicon Avalanche Photodiodes
|
Peak sens. wavelenght (nm)
780
|
Amplification factor
150
|
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KPDA050P-H8 Kyosemi Photodevices for sensors - Detectors, Silicon Avalanche Photodiodes |
Package
TO-18, hermetic seal
|
Responsivity (mA/W) @λ(nm)
450 @ 850
|
Sensitive Area (µmɸ)
500
|
Typology
Silicon Avalanche Photodiodes
|
Peak sens. wavelenght (nm)
780
|
Amplification factor
150
|
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KPDA100P-H8 Kyosemi Photodevices for sensors - Detectors, Silicon Avalanche Photodiodes |
Package
TO-18, hermetic seal
|
Responsivity (mA/W) @λ(nm)
450 @ 850
|
Sensitive Area (µmɸ)
1000
|
Typology
Silicon Avalanche Photodiodes
|
Peak sens. wavelenght (nm)
780
|
Amplification factor
150
|
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KPDF030F22-H8 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi |
Package
TO-18, hermetic seal
|
Responsivity (mA/W) @λ(nm)
1.2 @ 1950
|
Sensitive Area (µmɸ)
300
|
Sensitive Wavelenght (nm)
1200 - 2300
|
Typology
InGaAs NIR Photodiodes
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