Photodiodes - Phototransistors | Tecnosens S.p.a.

Photodiodes - Phototransistors

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Product	Description	Half Angle (deg)	Package	Peak sens. wavelenght (nm)	Sensitive Area (mm)	Short circuit current (µA)	Typology	Photo Current Vce = 5 V
Add to comparison	KPD301M4X Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Half Angle (deg) 150	Package Side view, plastic mold	Peak sens. wavelenght (nm) 950	Sensitive Area (mm) 2.59 x 2.59	Short circuit current (µA) 78	Typology Silicon Photodiodes
Add to comparison	KPD30S Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Half Angle (deg) 120	Package Surface mount	Peak sens. wavelenght (nm) 950	Sensitive Area (mm) 2.59 x 2.59	Short circuit current (µA) 68	Typology Silicon Photodiodes
Discontinued Add to comparison	KPD3065C Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi	Half Angle (deg) 120	Package ϕ 6,5 ceramic, epoxy lens	Peak sens. wavelenght (nm) 950	Sensitive Area (mm) 2.59 x 2.59	Short circuit current (µA) 70	Typology Silicon Photodiodes
Discontinued Add to comparison	KPT081M31 Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi	Half Angle (deg) 60	Package ϕ3 plastic mold	Peak sens. wavelenght (nm) 800	Sensitive Area (mm) 0.64 x 0.64		Typology Silicon Phototransistors	Photo Current Vce = 5 V 7 (mA) 1000 (lx)
Discontinued Add to comparison	KPT081M32 Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi	Half Angle (deg) 90	Package ϕ3 plastic mold	Peak sens. wavelenght (nm) 800	Sensitive Area (mm) 0.64 x 0.64		Typology Silicon Phototransistors	Photo Current Vce = 5 V 4 (mA) 1000 (lx)
Discontinued Add to comparison	KPT801C Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi	Half Angle (deg) 120	Package ϕ3 ceramic, epoxy lens	Peak sens. wavelenght (nm) 800	Sensitive Area (mm) 0.64 x 0.64		Typology Silicon Phototransistors	Photo Current Vce = 5 V 4 (mA) 1000 (lx)
Discontinued Add to comparison	KPT801H Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi	Half Angle (deg) 17	Package TO-18, hermetic seal	Peak sens. wavelenght (nm) 800	Sensitive Area (mm) 0.64 x 0.64		Typology Silicon Phototransistors	Photo Current Vce = 5 V 2 (mA) 100 (lx)
Discontinued Add to comparison	KPT801HB Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi	Half Angle (deg) 17	Package TO-18, hermetic seal	Peak sens. wavelenght (nm) 800	Sensitive Area (mm) 0.64 x 0.64		Typology Silicon Phototransistors	Photo Current Vce = 5 V 3 (mA) 100 (lx)
Discontinued Add to comparison	KPT811H Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi	Half Angle (deg) 17	Package TO-18, hermetic seal	Peak sens. wavelenght (nm) 800	Sensitive Area (mm) 0.64 x 0.64		Typology Silicon Phototransistors	Photo Current Vce = 5 V 2 (mA) 100 (lx)