Optoelectronic sensors
Optoelectronic sensors
| Product | Description | Characteristics | Typical Dark Current | Package | Sensitive Area (µmɸ) | Typology | Chip Material | Colour | Resin colour | External Diameter | Half Angle (deg) | Light intensity (mcd) | Wavelength (nm) | Output Power @lf(mA) | Output Power (mW) | Max Direct Voltage (V) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
KPDE10GC-V2 Kyosemi, Optical Communication Devices, InGaAs Photodiodes, 10Gbps InGaAs photodiode |
Characteristics
High speed
|
Typical Dark Current
10pA @ 5V
|
Package
Chip
|
Sensitive Area (µmɸ)
28
|
Typology
InGaAs Photodiodes
|
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KPEIMC-100 Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode |
Characteristics
Edge illuminated
|
Typical Dark Current
35pA @ 5V
|
Package
Chip
|
Sensitive Area (µmɸ)
80x100
|
Typology
InGaAs Photodiodes
|
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|
KPEIMC-UDCOM Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode |
Characteristics
Edge illuminated
|
Typical Dark Current
50pA @ 5V
|
Package
Chip
|
Sensitive Area (µmɸ)
100x120
|
Typology
InGaAs Photodiodes
|
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|
KPID150HC Kyosemi, Optical Communication Devices, Si High Speed & High Responsivity Photodiode |
Characteristics
Si high speed
|
Typical Dark Current
0.8nA @ 10V
|
Package
Chip
|
Sensitive Area (µmɸ)
1500
|
Typology
Si PIN Photodiodes
|
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|
Discontinued
|
KED591M52 Kyosemi, Photodevices for Sensors - Emitters, Plastic Mold LEDs for sensors, Yellow color, Kyosemi Photodevices for sensors |
Package
M52
|
Typology
Plastic Mold LEDs for Sensors
|
Chip Material
AIGaInP
|
Colour
Yellow
|
Resin colour
Clear
|
External Diameter
⌀5
|
Half Angle (deg)
30
|
Light intensity (mcd)
1800
|
Wavelength (nm)
590
|
Output Power @lf(mA)
20
|
Output Power (mW)
1.5
|
Max Direct Voltage (V)
2.4
|
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|
Discontinued
|
KED861M52 Kyosemi, Photodevices for Sensors - Emitters, Plastic Mold LEDs for sensors, Infrared color, Kyosemi Photodevices for sensors |
Package
M52
|
Typology
Plastic Mold LEDs for Sensors
|
Chip Material
GaAIAs
|
Colour
Infrared
|
Resin colour
Clear
|
External Diameter
⌀5
|
Half Angle (deg)
10
|
Wavelength (nm)
865
|
Output Power @lf(mA)
50
|
Output Power (mW)
22
|
Max Direct Voltage (V)
1.8
|
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|
Discontinued
|
KEDE1451M52 Kyosemi, Photodevices for Sensors - Emitters, Plastic Mold LEDs for sensors, Infrared color, Kyosemi Photodevices for sensors |
Package
M52
|
Typology
Plastic Mold LEDs for Sensors
|
Chip Material
InGaAsP
|
Colour
Infrared
|
Resin colour
Clear
|
External Diameter
⌀5
|
Half Angle (deg)
10
|
Wavelength (nm)
1450
|
Output Power @lf(mA)
50
|
Output Power (mW)
2.2
|
Max Direct Voltage (V)
1.3
|
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|
Discontinued
|
KPDE005HAn Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode |
Characteristics
Array
|
Typical Dark Current
30pA @ 5V
|
Package
Chip
|
Sensitive Area (µmɸ)
50
|
Typology
InGaAs Photodiodes
|
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|
Discontinued
|
KPDEH16C Optical Communication Devices, InGaAs Photodiodes, 25GHz InGaAs photodiode |
Characteristics
High speed
|
Typical Dark Current
0.5nA @ 2V
|
Package
Chip
|
Sensitive Area (µmɸ)
16
|
Typology
InGaAs Photodiodes
|
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|
Discontinued
|
KPDEH16DC Optical Communication Devices, InGaAs Photodiodes, 25GHz InGaAs photodiode |
Characteristics
High speed
|
Typical Dark Current
0.5nA @ 2V
|
Package
Chip
|
Sensitive Area (µmɸ)
16
|
Typology
InGaAs Photodiodes
|