Optoelectronic sensors
Optoelectronic sensors
| Product | Description | Characteristics | Typical Dark Current | Package | Sensitive Area (µmɸ) | Typology | Chip Material | Colour | Resin colour | External Diameter | Half Angle (deg) | Light intensity (mcd) | Wavelength (nm) | Output Power @lf(mA) | Output Power (mW) | Max Direct Voltage (V) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
KPDE10GC-V2 Kyosemi, Optical Communication Devices, InGaAs Photodiodes, 10Gbps InGaAs photodiode |
Characteristics
High speed
|
Typical Dark Current
10pA @ 5V
|
Package
Chip
|
Sensitive Area (µmɸ)
28
|
Typology
InGaAs Photodiodes
|
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KPEIMC-100 Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode |
Characteristics
Edge illuminated
|
Typical Dark Current
35pA @ 5V
|
Package
Chip
|
Sensitive Area (µmɸ)
80x100
|
Typology
InGaAs Photodiodes
|
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|
KPEIMC-UDCOM Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode |
Characteristics
Edge illuminated
|
Typical Dark Current
50pA @ 5V
|
Package
Chip
|
Sensitive Area (µmɸ)
100x120
|
Typology
InGaAs Photodiodes
|
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|
KPID150HC Kyosemi, Optical Communication Devices, Si High Speed & High Responsivity Photodiode |
Characteristics
Si high speed
|
Typical Dark Current
0.8nA @ 10V
|
Package
Chip
|
Sensitive Area (µmɸ)
1500
|
Typology
Si PIN Photodiodes
|
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|
Discontinued
|
KED661M53 Kyosemi, Photodevices for Sensors - Emitters, Plastic Mold LEDs for sensors, Red color, Kyosemi Photodevices for sensors |
Package
M53
|
Typology
Plastic Mold LEDs for Sensors
|
Chip Material
GaAIAs
|
Colour
Red
|
Resin colour
Clear
|
External Diameter
⌀5
|
Half Angle (deg)
70
|
Light intensity (mcd)
40
|
Wavelength (nm)
660
|
Output Power @lf(mA)
20
|
Output Power (mW)
3
|
Max Direct Voltage (V)
2.3
|
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|
Discontinued
|
KED941M53VC Kyosemi, Photodevices for Sensors - Emitters, Plastic Mold LEDs for sensors, Infrared color, Kyosemi Photodevices for sensors |
Package
M53
|
Typology
Plastic Mold LEDs for Sensors
|
Chip Material
GaAs
|
Colour
Infrared
|
Resin colour
Black
|
External Diameter
⌀5
|
Half Angle (deg)
90
|
Wavelength (nm)
940
|
Output Power @lf(mA)
50
|
Output Power (mW)
11
|
Max Direct Voltage (V)
1.6
|
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|
Discontinued
|
KPDE005HAn Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode |
Characteristics
Array
|
Typical Dark Current
30pA @ 5V
|
Package
Chip
|
Sensitive Area (µmɸ)
50
|
Typology
InGaAs Photodiodes
|
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|
Discontinued
|
KPDEH16C Optical Communication Devices, InGaAs Photodiodes, 25GHz InGaAs photodiode |
Characteristics
High speed
|
Typical Dark Current
0.5nA @ 2V
|
Package
Chip
|
Sensitive Area (µmɸ)
16
|
Typology
InGaAs Photodiodes
|
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|
Discontinued
|
KPDEH16DC Optical Communication Devices, InGaAs Photodiodes, 25GHz InGaAs photodiode |
Characteristics
High speed
|
Typical Dark Current
0.5nA @ 2V
|
Package
Chip
|
Sensitive Area (µmɸ)
16
|
Typology
InGaAs Photodiodes
|
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|
Discontinued
|
KPDEH16QC Kyosemi, Optical Communication Devices, InGaAs Photodiodes |
Characteristics
High speed
|
Typical Dark Current
0.5nA @ 2V
|
Package
Chip
|
Sensitive Area (µmɸ)
16
|
Typology
InGaAs Photodiodes
|