Optoelectronic sensors
Optoelectronic sensors
| Product | Description | Dimension | Half Angle (deg) | Wavelength | Package | Output Power (mW) | Operating temperature | Typical Direct Voltage (V) | Typology | Peak sens. wavelenght (nm) | Sensitive Area (mm) | Short circuit current (µA) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NS275L-6DFG Nitride Semiconductor - Deep UV LED |
Dimension
6.3 x 6.3 x 1.8
|
Half Angle (deg)
120
|
Wavelength
270-280 nm
|
Package
Surface mount
|
Output Power (mW)
19
|
Operating temperature
-30 ~ +60 °C
|
Typical Direct Voltage (V)
7.0
|
Typology
Ultra Violet LEDs
|
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|
NSxxxL-3SVR Nitride Semiconductor - LED UV |
Dimension
3.5 x 3.5 x 2.0
|
Half Angle (deg)
120
|
Wavelength
380-390 nm
390-400 nm
400-410 nm
|
Package
Surface mount
|
Output Power (mW)
1200
1100
|
Operating temperature
-10 ~ +85 °C
|
Typical Direct Voltage (V)
3.6
3.5
|
Typology
Ultra Violet LEDs
|
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|
KPD30S Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
120
|
Package
Surface mount
|
Typology
Silicon Photodiodes
|
Peak sens. wavelenght (nm)
950
|
Sensitive Area (mm)
2.59 x 2.59
|
Short circuit current (µA)
68
|