Optoelectronic sensors
Optoelectronic sensors
| Product | Description | Chip Material | Wavelength (nm) | Package | Output Power @lf(mA) | Output Power (mW) | Typology | Characteristics | Typical Dark Current | Sensitive Area (µmɸ) |
|---|---|---|---|---|---|---|---|---|---|---|
|
KED050CX-T Kyosemi, Photodevices for Sensors - Emitters, Point Source LED, Infrared LED Pigtail |
Chip Material
GaAIAs
|
Wavelength (nm)
850
|
Package
Pigtail
|
Output Power @lf(mA)
50
|
Output Power (mW)
-16(dBm)
|
Typology
Point Source LEDs
|
|||
|
KPDE10GC-V2 Kyosemi, Optical Communication Devices, InGaAs Photodiodes, 10Gbps InGaAs photodiode |
Package
Chip
|
Typology
InGaAs Photodiodes
|
Characteristics
High speed
|
Typical Dark Current
10pA @ 5V
|
Sensitive Area (µmɸ)
28
|
||||
|
KPEIMC-100 Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode |
Package
Chip
|
Typology
InGaAs Photodiodes
|
Characteristics
Edge illuminated
|
Typical Dark Current
35pA @ 5V
|
Sensitive Area (µmɸ)
80x100
|
||||
|
KPEIMC-UDCOM Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode |
Package
Chip
|
Typology
InGaAs Photodiodes
|
Characteristics
Edge illuminated
|
Typical Dark Current
50pA @ 5V
|
Sensitive Area (µmɸ)
100x120
|
||||
|
KPID150HC Kyosemi, Optical Communication Devices, Si High Speed & High Responsivity Photodiode |
Package
Chip
|
Typology
Si PIN Photodiodes
|
Characteristics
Si high speed
|
Typical Dark Current
0.8nA @ 10V
|
Sensitive Area (µmɸ)
1500
|
||||
|
Discontinued
|
KPDE005HAn Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode |
Package
Chip
|
Typology
InGaAs Photodiodes
|
Characteristics
Array
|
Typical Dark Current
30pA @ 5V
|
Sensitive Area (µmɸ)
50
|
||||
|
Discontinued
|
KPDEH16C Optical Communication Devices, InGaAs Photodiodes, 25GHz InGaAs photodiode |
Package
Chip
|
Typology
InGaAs Photodiodes
|
Characteristics
High speed
|
Typical Dark Current
0.5nA @ 2V
|
Sensitive Area (µmɸ)
16
|
||||
|
Discontinued
|
KPDEH16DC Optical Communication Devices, InGaAs Photodiodes, 25GHz InGaAs photodiode |
Package
Chip
|
Typology
InGaAs Photodiodes
|
Characteristics
High speed
|
Typical Dark Current
0.5nA @ 2V
|
Sensitive Area (µmɸ)
16
|
||||
|
Discontinued
|
KPDEH16QC Kyosemi, Optical Communication Devices, InGaAs Photodiodes |
Package
Chip
|
Typology
InGaAs Photodiodes
|
Characteristics
High speed
|
Typical Dark Current
0.5nA @ 2V
|
Sensitive Area (µmɸ)
16
|
||||
|
Discontinued
|
KPDEH16DLC Kyosemi, Optical Communication Devices, InGaAs Photodiodes |
Package
Chip
|
Typology
InGaAs Photodiodes
|
Characteristics
High speed
|
Typical Dark Current
0.5nA @ 2V
|
Sensitive Area (µmɸ)
16
|