Optoelectronic sensors
Optoelectronic sensors
| Product | Description | Characteristics | Typical Dark Current | Package | Sensitive Area (µmɸ) | Typology | Bit Rate (bps) |
|---|---|---|---|---|---|---|---|
|
KPDEA005-56F Kyosemi, Optical Communication Devices, InGaAs Avalanche Photodiodes, |
Characteristics
APD
|
Typical Dark Current
10nA
|
Package
Hermetic sealed
|
Sensitive Area (µmɸ)
55
|
Typology
InGaAs Avalanche Photodiodes
|
|
|
KPDEA007-56F Kyosemi, Optical Communication Devices, InGaAs Avalanche Photodiodes, InGaAs Avalanche Photodiodes |
Characteristics
APD
|
Typical Dark Current
15nA
|
Package
Hermetic sealed
|
Sensitive Area (µmɸ)
75
|
Typology
InGaAs Avalanche Photodiodes
|
|
|
Discontinued
|
KPDE030SL Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode |
Characteristics
L-band
|
Typical Dark Current
100pA @ 5V
|
Package
Hermetic sealed
|
Sensitive Area (µmɸ)
300
|
Typology
InGaAs Photodiodes
|
|
|
Discontinued
|
KPDX2GE Kyosemi, Optical Communication Devices, InGaAs PD-TIA Receivers, 2.5Gbps PD-TIA Receiver with Long Focal Lenght |
Characteristics
Preamplified receivers
|
Package
Hermetic sealed
|
Typology
InGaAs PD-TIA Receivers
|
Bit Rate (bps)
2.5G
|
||
|
Discontinued
|
KPDX3G Kyosemi, Optical Communication Devices, InGaAs PD-TIA Receivers, InGaAs PIN PD-TIA |
Characteristics
Preamplified receivers
|
Package
Hermetic sealed
|
Typology
InGaAs PD-TIA Receivers
|
Bit Rate (bps)
3G
|
||
|
Discontinued
|
KPID020D Kyosemi, Optical Communication Devices, Si PIN Photodiodes, High Speed Photodiode |
Characteristics
Si high speed
|
Typical Dark Current
10pA @ 3V
|
Package
Hermetic sealed
|
Sensitive Area (µmɸ)
200
|
Typology
Si PIN Photodiodes
|
|
|
Discontinued
|
KPID050M Kyosemi, Optical Communication Devices, Si PIN Photodiodes, High Speed Photodiode |
Characteristics
Si high speed
|
Typical Dark Current
40pA @ 3V
|
Package
Hermetic sealed
|
Sensitive Area (µmɸ)
500
|
Typology
Si PIN Photodiodes
|