Optoelectronic sensors
Optoelectronic sensors
| Product | Description | Half Angle (deg) | Package | Peak sens. wavelenght (nm) | Sensitive Area (mm) | Short circuit current (µA) | Typology | Characteristics | Typical Dark Current | Sensitive Area (µmɸ) |
|---|---|---|---|---|---|---|---|---|---|---|
|
|
KPD301M4X Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
150
|
Package
Side view, plastic mold
|
Peak sens. wavelenght (nm)
950
|
Sensitive Area (mm)
2.59 x 2.59
|
Short circuit current (µA)
78
|
Typology
Silicon Photodiodes
|
|||
|
KPDE008-S Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Cap Isolated 2-pin Mini Can InGaAs PD |
Package
Mini can
|
Typology
InGaAs Photodiodes
|
Characteristics
Mini can
|
Typical Dark Current
160pA (max) @ 5V
|
Sensitive Area (µmɸ)
80
|
||||
|
KPDE020-S Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Cap Isolated 2-pin Mini Can InGaAs PD |
Package
Mini can
|
Typology
InGaAs Photodiodes
|
Characteristics
Mini can
|
Typical Dark Current
400pA (max) @ 5V
|
Sensitive Area (µmɸ)
200
|
||||
|
KPDE030-S Kyosemi, Optical Communication Devices, InGaAs Photodiodes, Cap Isolated 2-pin Mini Can InGaAs PD |
Package
Mini can
|
Typology
InGaAs Photodiodes
|
Characteristics
Mini can
|
Typical Dark Current
600pA (max) @ 5V
|
Sensitive Area (µmɸ)
300
|