Optoelectronic sensors | Tecnosens S.p.a.

Optoelectronic sensors

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Product	Description	Dimension	Half Angle (deg)	Wavelength	Package	Output Power (mW)	Operating temperature	Typical Direct Voltage (V)	Typology	Peak sens. wavelenght (nm)	Sensitive Area (mm)	Short circuit current (µA)	Chip Material	Wavelength (nm)	Output Power @lf(mA)
Add to comparison	NSxxxL-3SVR Nitride Semiconductor - LED UV	Dimension 3.5 x 3.5 x 2.0	Half Angle (deg) 120	Wavelength 380-390 nm 390-400 nm 400-410 nm	Package Surface mount	Output Power (mW) 1200 1100	Operating temperature -10 ~ +85 °C	Typical Direct Voltage (V) 3.6 3.5	Typology Ultra Violet LEDs
Add to comparison	NSxxxL-3SVT Nitride Semiconductor - LED UV	Dimension 3.5 x 3.5 x 2.8	Half Angle (deg) 45	Wavelength 380-390 nm 390-400 nm 400-410 nm	Package Surface mount	Output Power (mW) 1100 1050	Operating temperature -10 ~ +85 °C	Typical Direct Voltage (V) 3.6 3.5	Typology Ultra Violet LEDs
Add to comparison	NSxxxL-6D4G Nitride Semiconductor - Deep UV LED	Dimension 6.3 x 6.3 x 1.8	Half Angle (deg) 116	Wavelength 270-280 nm 305-315 nm	Package Surface mount	Output Power (mW) 13.0 6.8	Operating temperature -30 ~ +60 °C	Typical Direct Voltage (V) 6.5 5.5	Typology Ultra Violet LEDs
Add to comparison	NSxxxL-7SMG Nitride Semiconductor - UV LED	Dimension 6.8 x 6.8 x 1.0	Half Angle (deg) 115	Wavelength 360-370 nm 380-390 nm 400-410 nm 390-400 nm	Package Surface mount	Output Power (mW) 3800 3500	Operating temperature -10 ~ +85 °C	Typical Direct Voltage (V) 4.0 3.5	Typology Ultra Violet LEDs
Add to comparison	KPD30S Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi		Half Angle (deg) 120		Package Surface mount				Typology Silicon Photodiodes	Peak sens. wavelenght (nm) 950	Sensitive Area (mm) 2.59 x 2.59	Short circuit current (µA) 68
Discontinued Add to comparison	KED085-P01 Kyosemi, Photodevices for Sensors - Emitters, GaAIAs Infrared LED		Half Angle (deg) 130		Package Surface mount				Typology Infrared LEDs				Chip Material GaAIAs	Wavelength (nm) 850	Output Power @lf(mA) 1000
Discontinued Add to comparison	KED661T1 Kyosemi, Photodevices for Sensors - Emitters, AIGaInP Red LED		Half Angle (deg) 145		Package Surface mount	Output Power (mW) 14			Typology Red LEDs				Chip Material AIGaInP	Wavelength (nm) 660	Output Power @lf(mA) 20
Discontinued Add to comparison	KED661T2 Kyosemi, Photodevices for Sensors - Emitters, AIGaInP Red LED		Half Angle (deg) 145		Package Surface mount	Output Power (mW) 14			Typology Red LEDs				Chip Material AIGaInP	Wavelength (nm) 660	Output Power @lf(mA) 20
Discontinued Add to comparison	KPD101T3 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi		Half Angle (deg) 140		Package Surface mount				Typology Silicon Photodiodes	Peak sens. wavelenght (nm) 850	Sensitive Area (mm) 0.81 x 0.81	Short circuit current (µA) 6
Discontinued Add to comparison	KPD151T3 Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi		Half Angle (deg) 140		Package Surface mount				Typology Silicon Photodiodes	Peak sens. wavelenght (nm) 850	Sensitive Area (mm) 1.25 x 1.25	Short circuit current (µA) 15