Optoelectronic sensors
Optoelectronic sensors
| Product | Description | Chip Material | Half Angle (deg) | Wavelength (nm) | Package | Output Power @lf(mA) | Output Power (mW) | Typology |
|---|---|---|---|---|---|---|---|---|
|
KED601H Kyosemi, Photodevices for Sensors - Emitters, GaAIAs High Power Infrared LED |
Chip Material
GaAIAs
|
Half Angle (deg)
14
|
Wavelength (nm)
890
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
100
|
Output Power (mW)
9
|
Typology
Infrared LEDs
|
|
|
KED604H Kyosemi, Photodevices for Sensors - Emitters, Infrared LED |
Chip Material
GaAIAs
|
Half Angle (deg)
60
|
Wavelength (nm)
890
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
100
|
Output Power (mW)
11
|
Typology
Infrared LEDs
|
|
Discontinued
|
KED501H Kyosemi, Photodevices for Sensors - Emitters, Gas Infrared LED |
Chip Material
GaAs
|
Half Angle (deg)
12
|
Wavelength (nm)
950
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
100
|
Output Power (mW)
7.2
|
Typology
Infrared LEDs
|
|
Discontinued
|
KED504H Kyosemi, Photodevices for Sensors - Emitters, Infrared LED |
Chip Material
GaAs
|
Half Angle (deg)
85
|
Wavelength (nm)
950
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
100
|
Output Power (mW)
8
|
Typology
Infrared LEDs
|
|
Discontinued
|
KED511H Kyosemi, Photodevices for Sensors - Emitters, Gas Infrared LED |
Chip Material
GaAs
|
Half Angle (deg)
12
|
Wavelength (nm)
950
|
Package
TO-18, hermetic seal
|
Output Power @lf(mA)
100
|
Output Power (mW)
7.2
|
Typology
Infrared LEDs
|