Optoelectronic sensors | Tecnosens S.p.a.

Optoelectronic sensors

Change view mode

Product	Description	Dimension	Half Angle (deg)	Wavelength	Package	Output Power (mW)	Operating temperature	Typical Direct Voltage (V)	Typology	Peak sens. wavelenght (nm)	Sensitive Area (mm)	Short circuit current (µA)	Photo Current Vce = 5 V
Add to comparison	NS275L-6DFG Nitride Semiconductor - Deep UV LED	Dimension 6.3 x 6.3 x 1.8	Half Angle (deg) 120	Wavelength 270-280 nm	Package Surface mount	Output Power (mW) 19	Operating temperature -30 ~ +60 °C	Typical Direct Voltage (V) 7.0	Typology Ultra Violet LEDs
Add to comparison	NSxxxL-3SVR Nitride Semiconductor - LED UV	Dimension 3.5 x 3.5 x 2.0	Half Angle (deg) 120	Wavelength 380-390 nm 390-400 nm 400-410 nm	Package Surface mount	Output Power (mW) 1200 1100	Operating temperature -10 ~ +85 °C	Typical Direct Voltage (V) 3.6 3.5	Typology Ultra Violet LEDs
Add to comparison	KPD1803K Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi		Half Angle (deg) 120		Package TO-18, epoxy lens				Typology Silicon Photodiodes	Peak sens. wavelenght (nm) 840	Sensitive Area (mm) 1.30 x 1.60	Short circuit current (µA) 24
Add to comparison	KPD30S Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi		Half Angle (deg) 120		Package Surface mount				Typology Silicon Photodiodes	Peak sens. wavelenght (nm) 950	Sensitive Area (mm) 2.59 x 2.59	Short circuit current (µA) 68
Discontinued Add to comparison	KPD3065C Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi		Half Angle (deg) 120		Package ϕ 6,5 ceramic, epoxy lens				Typology Silicon Photodiodes	Peak sens. wavelenght (nm) 950	Sensitive Area (mm) 2.59 x 2.59	Short circuit current (µA) 70
Discontinued Add to comparison	KPT801C Photodevices for Sensors - Detectors, Silicon Phototransistor, Kyosemi		Half Angle (deg) 120		Package ϕ3 ceramic, epoxy lens				Typology Silicon Phototransistors	Peak sens. wavelenght (nm) 800	Sensitive Area (mm) 0.64 x 0.64		Photo Current Vce = 5 V 4 (mA) 1000 (lx)