Optoelectronic sensors
Optoelectronic sensors
| Product | Description | Half Angle (deg) | Package | Peak sens. wavelenght (nm) | Sensitive Area (mm) | Short circuit current (µA) | Typology | Amplification factor | Responsivity (mA/W) @λ(nm) | Sensitive Area (µmɸ) |
|---|---|---|---|---|---|---|---|---|---|---|
|
KPD1201H Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
23
|
Package
TO-18, hermetic seal
|
Peak sens. wavelenght (nm)
880
|
Sensitive Area (mm)
0.92 x 0.92
|
Short circuit current (µA)
60
|
Typology
Silicon Photodiodes
|
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|
|
KPD1203H Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
100
|
Package
TO-18, hermetic seal
|
Peak sens. wavelenght (nm)
880
|
Sensitive Area (mm)
0.92 x 0.92
|
Short circuit current (µA)
8
|
Typology
Silicon Photodiodes
|
|||
|
KPD1203K Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
140
|
Package
TO-18, epoxy lens
|
Peak sens. wavelenght (nm)
880
|
Sensitive Area (mm)
0.92 x 0.92
|
Short circuit current (µA)
11
|
Typology
Silicon Photodiodes
|
|||
|
|
KPD1801H Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
34
|
Package
TO-18, hermetic seal
|
Peak sens. wavelenght (nm)
840
|
Sensitive Area (mm)
1.30 x 1.60
|
Short circuit current (µA)
70
|
Typology
Silicon Photodiodes
|
|||
|
KPD1803H Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
95
|
Package
TO-18, hermetic seal
|
Peak sens. wavelenght (nm)
840
|
Sensitive Area (mm)
1.30 x 1.60
|
Short circuit current (µA)
17
|
Typology
Silicon Photodiodes
|
|||
|
|
KPD1803K Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
120
|
Package
TO-18, epoxy lens
|
Peak sens. wavelenght (nm)
840
|
Sensitive Area (mm)
1.30 x 1.60
|
Short circuit current (µA)
24
|
Typology
Silicon Photodiodes
|
|||
|
|
KPD301M4X Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
150
|
Package
Side view, plastic mold
|
Peak sens. wavelenght (nm)
950
|
Sensitive Area (mm)
2.59 x 2.59
|
Short circuit current (µA)
78
|
Typology
Silicon Photodiodes
|
|||
|
KPD30S Photodevices for Sensors - Detectors, Silicon Photodiodes, Kyosemi |
Half Angle (deg)
120
|
Package
Surface mount
|
Peak sens. wavelenght (nm)
950
|
Sensitive Area (mm)
2.59 x 2.59
|
Short circuit current (µA)
68
|
Typology
Silicon Photodiodes
|
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|
KPDA020P-H8 Kyosemi Photodevices for sensors - Detectors, Silicon Avalanche Photodiodes |
Package
TO-18, hermetic seal
|
Peak sens. wavelenght (nm)
780
|
Typology
Silicon Avalanche Photodiodes
|
Amplification factor
150
|
Responsivity (mA/W) @λ(nm)
450 @ 850
|
Sensitive Area (µmɸ)
200
|
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|
KPDA050P-H8 Kyosemi Photodevices for sensors - Detectors, Silicon Avalanche Photodiodes |
Package
TO-18, hermetic seal
|
Peak sens. wavelenght (nm)
780
|
Typology
Silicon Avalanche Photodiodes
|
Amplification factor
150
|
Responsivity (mA/W) @λ(nm)
450 @ 850
|
Sensitive Area (µmɸ)
500
|