Optoelectronic sensors | Tecnosens S.p.a.

Optoelectronic sensors

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Product	Description	Dust Proof	Gap	Mounting	Output	Output Mode	Output type	Peak sens. wavelenght (nm)	Series	Chip Material	Half Angle (deg)	Wavelength (nm)	Package	Output Power @lf(mA)	Output Power (mW)	Typology
Discontinued Add to comparison	KB892 Model KB892 consist of an infra Red LED and a Light modulation Photo IC(Digital Output). The reflective method is also useful.	Dust Proof Yes	Gap 500 mm	Mounting Wire & Connector	Output Light modulation type	Output Mode Digital low level	Output type Open collector
Discontinued Add to comparison	KB893 Photointerrupter KB893 consists of an Infrared LED and a Photo IC with digital output.	Dust Proof Yes	Gap 1,5M	Mounting Wire & Connector	Output Light modulation type	Output Mode Digital low level	Output type Open collector
Discontinued Add to comparison	KD1299 Model KD1299 is silicon photodiode mounted in TO-18 type header with epoxy encapsulation.			Mounting TO-18 Stem & Window	Output Photo Diode	Output Mode Livello logico alto	Output type Pull-up	Peak sens. wavelenght (nm) 900nm	Series KD Series
Discontinued Add to comparison	KD1366 Model KD1366 is silicon photodiode mounted in Surface mount package			Mounting SMD	Output Photo Diode	Output Mode Livello logico alto	Output type Pull-up	Peak sens. wavelenght (nm) 900nm	Series KD Series
Discontinued Add to comparison	KED080DXH Kyosemi, Photodevices for Sensors - Emitters, Point Source LED, Point-source Infrared LED									Chip Material GaAIAs	Half Angle (deg) 110	Wavelength (nm) 850	Package TO-46, hermetic seal	Output Power @lf(mA) 20	Output Power (mW) 1.0	Typology Point Source LEDs
Discontinued Add to comparison	KED085-P01 Kyosemi, Photodevices for Sensors - Emitters, GaAIAs Infrared LED									Chip Material GaAIAs	Half Angle (deg) 130	Wavelength (nm) 850	Package Surface mount	Output Power @lf(mA) 1000		Typology Infrared LEDs
Discontinued Add to comparison	KED351CDL Kyosemi, Photodevices for Sensors - Emitters, GaAIAs High Power Infrared LED									Chip Material GaAIAs	Half Angle (deg) 145	Wavelength (nm) 870	Package ϕ3 ceramic, epoxy lens	Output Power @lf(mA) 20	Output Power (mW) 6	Typology Infrared LEDs
Discontinued Add to comparison	KED351RCD Kyosemi, Photodevices for Sensors - Emitters, GaAIAs Red LED									Chip Material GaAIAs	Half Angle (deg) 160	Wavelength (nm) 660	Package ϕ3 ceramic, epoxy lens	Output Power @lf(mA) 20	Output Power (mW) 3.2	Typology Red LEDs
Discontinued Add to comparison	KED365US1 Kyosemi, Photodevices for Sensors - Emitters, Ultra Violet UV Led									Chip Material GaN	Half Angle (deg) 100	Wavelength (nm) 367	Package Surface mount, ceramic	Output Power @lf(mA) 20	Output Power (mW) 2.1	Typology Ultra Violet LEDs
Discontinued Add to comparison	KED373US1 Kyosemi, Photodevices for Sensors - Emitters, Ultra Violet UV Led, InGaN GaN UV LED									Chip Material InGaN	Half Angle (deg) 100	Wavelength (nm) 373	Package Surface mount, ceramic	Output Power @lf(mA) 20	Output Power (mW) 1.3	Typology Ultra Violet LEDs