Photodiodes - Phototransistors
Photodiodes - Phototransistors
| Product | Description | Characteristics | Typical Dark Current | Package | Sensitive Area (µmɸ) | Typology | Responsivity (mA/W) @λ(nm) | Sensitive Wavelenght (nm) | Bit Rate (bps) |
|---|---|---|---|---|---|---|---|---|---|
|
KPDE030SA-TU Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode |
Characteristics
Mini can pigtail
|
Typical Dark Current
600pA (max) @ 5V
|
Package
Mini can pigtail
|
Sensitive Area (µmɸ)
300
|
Typology
InGaAs Photodiodes
|
|||
|
KPDEA005-56F Kyosemi, Optical Communication Devices, InGaAs Avalanche Photodiodes, |
Characteristics
APD
|
Typical Dark Current
10nA
|
Package
Hermetic sealed
|
Sensitive Area (µmɸ)
55
|
Typology
InGaAs Avalanche Photodiodes
|
|||
|
KPDEA007-56F Kyosemi, Optical Communication Devices, InGaAs Avalanche Photodiodes, InGaAs Avalanche Photodiodes |
Characteristics
APD
|
Typical Dark Current
15nA
|
Package
Hermetic sealed
|
Sensitive Area (µmɸ)
75
|
Typology
InGaAs Avalanche Photodiodes
|
|||
|
KPDE10GC-V2 Kyosemi, Optical Communication Devices, InGaAs Photodiodes, 10Gbps InGaAs photodiode |
Characteristics
High speed
|
Typical Dark Current
10pA @ 5V
|
Package
Chip
|
Sensitive Area (µmɸ)
28
|
Typology
InGaAs Photodiodes
|
|||
|
KPDF030F22-H8 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi |
Package
TO-18, hermetic seal
|
Sensitive Area (µmɸ)
300
|
Typology
InGaAs NIR Photodiodes
|
Responsivity (mA/W) @λ(nm)
1.2 @ 1950
|
Sensitive Wavelenght (nm)
1200 - 2300
|
|||
|
KPDF030F26-H8 Photodevices for Sensors - Detectors, InGaAs NIR Photodiodes, Kyosemi |
Package
TO-18, hermetic seal
|
Sensitive Area (µmɸ)
300
|
Typology
InGaAs NIR Photodiodes
|
Responsivity (mA/W) @λ(nm)
1.2 @ 2200
|
Sensitive Wavelenght (nm)
1200 - 2700
|
|||
|
KPDM024MT Kyosemi, Optical Communication Devices, InGaAs Photodiodes, High Sensitive InGaAs photodiode |
Characteristics
Array
|
Typical Dark Current
80pA @ 5V
|
Package
Hermetic sealed, Pigtailed with ribon fiber
|
Sensitive Area (µmɸ)
-
|
Typology
InGaAs Photodiodes
|
|||
|
KPDX10G-XMD Kyosemi, Optical Communication Devices, InGaAs PD-TIA Receivers, XMD 10Gbps PIN-TIA Receiver |
Characteristics
ROSA
|
Package
InGaAs ROSA with FPC (Flexible-Printed Circuit)
|
Typology
InGaAs PD-TIA Receivers
|
Bit Rate (bps)
10G
|
||||
|
KPDX1GK Kyosemi, Optical Communication Devices, InGaAs PD-TIA Receivers, 1.25Gbps InGaAs PIN PD-TIA |
Characteristics
Preamplified receivers
|
Package
Hermetic sealed, Pigtail
|
Typology
InGaAs PD-TIA Receivers
|
Bit Rate (bps)
1.25G
|
||||
|
KPDXA10G-XMD Kyosemi, Optical Communication Devices, InGaAs APD-TIA Receivers, XMD 10Gbps APD-TIA Receiver |
Characteristics
APD-TIA
|
Package
Hermetic sealed, Pigtail, LC-ROSA
|
Typology
InGaAs APD-TIA Receivers
|
Bit Rate (bps)
10G
|